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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3352
DESCRIPTION *With TO-220Fa package *High voltage *High speed switching APPLICATIONS *For high speed switching applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 800 500 7 1.5 3.0 0.5 25 W UNIT V V V A A A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V 15 8 MIN 500
2SC3352
SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT
TYP.
MAX
UNIT V
1.0 1.5 0.1 0.1
V V mA mA
2.5
MHz
Switching times ton tstg tf Turn-on time Storage time Fall time IC=1A; IB1=-IB2=0.2A VCC=200V 1.0 3.0 1.0 s s s
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3352
Fig.2 Outline dimensions (unindicated tolerance:0.15 mm)
3


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